Pattern-forming method and composition

ABSTRACT

A pattern-forming method includes forming a base pattern including a first polymer on a front face side. A composition is applied on at least a lateral face of the base pattern. The composition includes at least one polymer that is capable of interacting with the first polymer. The composition is heated such that a portion of the at least one polymer interacts with the first polymer and that a coating film is formed on the lateral face of the base pattern. Another portion of the at least one polymer not having interacted with the first polymer is removed to form a resist pattern. The base pattern in a planar view has a shape with a long axis and a short axis, and a ratio of lengths of the long axis to the short axis is no less than 1.5 and no greater than 10.

BACKGROUND OF THE INVENTION Field of Invention

The present invention relates to a pattern-forming method and acomposition.

Description of the Related Art

In these days, microfabrication of various types of electronic devicestructures such as semiconductor devices and liquid crystal devices hasbeen accompanied by demands for miniaturization of patterns inlithography processes. To meet such demands, methods have been proposedin which a side wall film is formed on a side wall of each opening in abase pattern formed on a substrate to thereby obtain a resist pattern inwhich the each opening has a smaller diameter, and the substrate isetched by using the resist pattern to obtain a substrate pattern (seeJapanese Unexamined Patent Application, Publication Nos. 2008-300740 and2015-149473).

However, the conventional methods have disadvantages: that it may bedifficult to permit a uniform shrinkage of the opening on the basepattern regardless of directions, particularly in the case of the basepattern having an anisotropic shape such as an elliptic shape in aplanar view and that even in the case of the base pattern having anisotropic shape such as a circular shape in a planar view, it may alsobe difficult to uniformly shrink and to obtain a resist pattern havinglittle directional variance in pattern diameter and a small CDU(Critical Dimension Uniformity). According to the conventional method,it may therefore be difficult to obtain a substrate pattern in a desiredshape.

PRIOR ART DOCUMENTS Patent Documents

Patent Document 1: Japanese Unexamined Patent Application, PublicationNo. 2008-300740

Patent Document 2: Japanese Unexamined Patent Application, PublicationNo. 2015-149473

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

The present invention was made in view of the foregoing circumstances,and an objective thereof is to provide a pattern-forming method and acomposition that can form a resist pattern by shrinking superior indirectional uniformity of a dimension reduction amount, and that canprovide, by using such a superior resist pattern as a mask, a patternhaving a desired shape.

Means for Solving the Problems

According to an aspect of the invention made for solving theaforementioned problems, a pattern-forming method (hereinafter, may bealso referred to as “pattern-forming method (I)”) includes the steps of:forming a base pattern on a front face side of a substrate directly orvia other layer (hereinafter, may be also referred to as “basepattern-forming step”); applying a composition (hereinafter, may be alsoreferred to as “composition (I)”) on at least a lateral face of the basepattern, the composition comprising one or a plurality of polymers(hereinafter, may be also referred to as “(A) polymer” or “polymer (A)”)that is/are capable of interacting with a first polymer (hereinafter,may be also referred to as “(P) polymer” or “polymer (P)”) constitutingthe base pattern; heating the composition (I) after the applying(hereinafter, may be also referred to as “heating step”); removing aportion of the polymer(s) (A) not having interacted with the polymer (P)(hereinafter, may be also referred to as “removing step”); and etchingthe substrate by using directly or indirectly a resist patterncomprising the base pattern and a coating film obtained after theremoving step overlaid on the lateral face thereof (hereinafter, may bealso referred to as “etching step”), in which the base pattern in aplanar view had a shape with a long axis and a short axis, and a ratioof the lengths of the long axis to the short axis (hereinafter, may bealso referred to as “long axis/short axis ratio”) is no less than 1.5and no greater than 10.

According to another aspect of the invention made for solving theaforementioned problems, a pattern-forming method (hereinafter, may bealso referred to as “pattern-forming method (II)”) includes the stepsof: forming a base pattern on a front face side of a substrate directlyor via other layer (base pattern-forming step); applying a composition(hereinafter, may be also referred to as “composition (I′)”) on at leasta lateral face of the base pattern, the composition comprising one or aplurality of polymers (hereinafter, may be also referred to as “polymers(A′)”) that is/are capable of interacting with the polymer (P)constituting the base pattern (application step); heating thecomposition (I′) after the application step (heating step); removing aportion of the polymers (A′) not having interacted with the polymer (P)(removing step); and etching the substrate by using directly orindirectly a resist pattern comprising the base pattern and a coatingfilm obtained after the removing step overlaid on the lateral facethereof (etching step), in which weight average molecular weights of thepolymers (A′) are different from each other.

According to yet another aspect of the invention made for solving theaforementioned problems, a composition includes two types of polymers ofwhich weight average molecular weights are different from each other, inwhich the two types of polymers are a styrene polymer having a groupthat bonds to at least one end of a main chain and comprises at leastone of: a hydroxy group; a carboxy group; a sulfanyl group; an epoxygroup; a cyano group; a vinyl group; and a carbonyl group, and adifference in weight average molecular weight between the two types ofpolymers is no less than 2,000 and no greater than 30,000, the weightaverage molecular weight of one of the two types of polymers is no lessthan 5,000 and no greater than 25,000, and the weight average molecularweight of another polymer is greater than 25,000 and no greater than50,000.

As used herein, being “capable of interacting” means that, for example,polymers can form a chemical bond therebetween. The “chemical bond” is anotion encompassing a covalent bond, an ionic bond, a metallic bond, anda coordinate bond, as well as the electrostatic attractive force betweenmolecules and a hydrogen bond. A “long axis” in a base pattern asreferred to means the longest one among the line segments connectingarbitrary two points on an outer periphery of one recessed part in thebase pattern. A “short axis” as referred to means the longest one amongthe line segments connecting arbitrary two points on the outerperiphery, being orthogonal to the long axis.

Effects of the Invention

According to the pattern-forming method and the composition of thepresent invention, a resist pattern can be formed by shrinking superiorin directional uniformity of a dimension reduction amount, and by usingsuch a superior resist pattern as a mask, a pattern having a desiredshape can be obtained. Therefore, the pattern-forming method can besuitably used for working processes of semiconductor devices, and thelike, in which microfabrication is expected to be further in progresshereafter.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic cross sectional view illustrating one exampleof the state after forming a base pattern on the front face side of asubstrate;

FIG. 2 shows a schematic cross sectional view illustrating one exampleof the state after applying the composition (I) on at least the lateralface of the base pattern shown in FIG. 1;

FIG. 3 shows a schematic cross sectional view illustrating one exampleof the state after heating the composition (I) of FIG. 2; and

FIG. 4 shows a schematic cross sectional view illustrating one exampleof the state after removing a portion of the polymer (A) illustrated inFIG. 3 not having interacted with a polymer constituting the basepattern.

DESCRIPTION OF THE EMBODIMENTS

Embodiments of the pattern-forming method according to the presentinvention will be described in detail hereinafter. The pattern-formingmethod includes the following pattern-forming method (I) andpattern-forming method (II).

Pattern-Forming Method (I)

The pattern-forming method (I) includes the base pattern-forming step,the application step, the heating step, the removing step, and theetching step. In the pattern-forming method (I), the base pattern in aplanar view has a shape with a long axis and a short axis, and the longaxis/short axis ratio is no less than 1.5 and no greater than 10.

The pattern-forming method (I), including the above described steps andemploying the composition (I) containing the particular polymer (A) as acomposition to be applied in the application step, allows shrinkingsuperior in directional uniformity of a dimension reduction amount inthe case of the base pattern having the particular shape, and canprovide a resist pattern with a dimension reduction amount ratio closeto 1. In addition, by using such a superior resist pattern as a mask, apattern having a desired shape can be obtained.

Pattern-Forming Method (II)

The pattern-forming method (II) includes the base pattern-forming step,the application step, the heating step, the removing step, and theetching step. In the pattern-forming method (II), the composition (I′)to be applied in the application step includes a plurality of polymers(polymers (A′)) having weight average molecular weights that aredifferent from each other.

The pattern-forming method (I), including the above described steps andemploying a composition containing a mixture of the plurality ofpolymers of which weight average molecular weights are different fromeach other as the composition (I′) to be applied in the applicationstep, allows shrinking superior in directional uniformity of a dimensionreduction amount in the case of the base pattern having the particularshape, and can provide a resist pattern with a small CDU in the case ofthe base pattern having an isotropic shape in a planar view and canprovide a resist pattern with a dimension reduction amount ratio closeto 1 in the case of the base pattern having an anisotropic shape in aplanar view. In addition, by using such a superior resist pattern as amask, a pattern having a desired shape can be formed. Hereinafter, eachstep will be described with reference to drawings.

Base Pattern-Forming Step

In this step, a base pattern is formed on the front face side of asubstrate directly or via other layer. The base pattern 2 may bedirectly formed on one face of a substrate 1 as shown in FIG. 1, or maybe formed via other layer by, for example, forming an underlayer film, aspin-on glass (SOG) film and/or a resist film on the upper face (oneface side) of the substrate, and then forming the base pattern 2 on theupper face side (a face side not facing the substrate 1) of these filmson the substrate 1. Of these procedures, in light of possible formationof the pattern in a more convenient manner on the substrate by etchingusing as a mask the resist pattern formed, it is preferred that the basepattern is directly formed on one face side of the substrate.

The base pattern 2 includes a polymer (hereinafter, may be also referredto as “polymer (P)”) that is capable of interacting with the polymer (A)contained in the composition (I) described later. As the polymer (P),for example, polymers and the like having a group that is capable ofinteracting with the polymer (A) may be exemplified. As the group thatis capable of interacting with the polymer (A), for example, a hydroxygroup, a carboxy group, a carbonyl group, and the like may beexemplified. In the case of the base pattern 2 being formed by etchingas described later, a hydroxy group, a carboxy group, a carbonyl groupand the like may be generally contained in the constituent polymer.

The polymer (P) is not particularly limited as long as the polymer caninteract with the polymer (A), and in light of an improvement of etchingresistance, preferably includes as a principal component a polymerhaving an aromatic ring (hereinafter, may be also referred to as“polymer (P1)”). The “principal component” as referred to means acomponent whose proportion is the largest, preferably no less than 50%by mass and more preferably no less than 70%.

As the polymer (P1), for example, a novolak polymer, a resol polymer, astyrene polymer, an acenaphthylene polymer, a calixarene polymer, apyrene polymer and the like may be exemplified.

The lower limit of the proportion of the aromatic ring in the polymer(P1) is preferably 50% by mass, more preferably 60% by mass, and stillmore preferably 70% by mass. The upper limit of the proportion ispreferably 99% by mass, and more preferably 95% by mass.

Procedure of Base Pattern Formation

According to an exemplary procedure of directly forming the base pattern2 on one face of the substrate 1, for example, after directly formingthe underlayer film on one face of the substrate 1, a hole pattern isformed on the underlayer film. In this procedure, more specifically, theunderlayer film is formed on the upper face side of the substrate 1 byusing a composition for underlayer film formation. Next, as needed, anSOG film may be formed on the face side not facing the substrate 1 ofthe underlayer film on the substrate 1 by using an SOG composition. Theresist film is formed on the upper face of the underlayer film or theSOG film on the substrate 1 by using a resist composition. Then, thisresist film is exposed and developed, whereby a resist film pattern isformed. By using this resist film pattern as a mask, the SOG film and/orthe underlayer film are/is sequentially etched. The etching proceduremay involve dry etching in which a gas mixture of CF₄/O₂/Air, N₂/O₂,etc., is used; wet etching in which an aqueous hydrofluoric acidsolution, etc., is used; or the like. Of these, in light of morefavorable transfer of the shape to be executed and possibility offormation of a greater number of groups that are capable of interactingwith the polymer (A) in the polymer constituting the base pattern, thedry etching is preferred. When the underlayer film and the SOG film aresequentially dry-etched, it is preferred that the SOG film remaining onthe surface of the resulting underlayer film pattern is detached away byusing an aqueous hydrofluoric acid solution or the like. Accordingly,the base pattern 2 directly formed on one face of the substrate 1 isobtained.

As the substrate 1, for example, a silicon substrate such as a silicon(Bare-Si) wafer, and a conventional well-known substrate such as analuminum-coated wafer may be used. Of these, the silicon substrate ispreferred and the silicon wafer is more preferred.

As the composition for underlayer film formation, a conventionallywell-known organic underlayer film-forming material or the like may beused, and for example, a composition for underlayer film formationcontaining a crosslinking agent and the like may be exemplified.

The forming procedure of the underlayer film is not particularlylimited, and, for example, a process in which after applying acomposition for underlayer film formation on one face of the substratewith by a well-known procedure such as spin-coating, followed byprebaking (PB), the resultant coating film is hardened by carrying outirradiation with a radioactive ray and/or heating, and the like may beexemplified. Examples of the radioactive ray for use in irradiationinclude: electromagnetic waves such as a visible light ray, anultraviolet ray, a far ultraviolet ray, an X-ray and a γ-ray; particlerays such as electron beam, a molecular beam and an ion beam; and thelike. The lower limit of the temperature of the heating is preferably90° C., more preferably 120° C., and still more preferably 150° C. Theupper limit of the temperature of the heating is preferably 550° C. andmore preferably 450° C., and a temperature of no higher than 300° C. iseven more preferred. The lower limit of the heating time period ispreferably 5 sec, more preferably 10 sec, and still more preferably 20sec. The upper limit of the heating time period is preferably 1,200 sec,more preferably 600 sec, and still more preferably 300 sec. The lowerlimit of the average thickness of the underlayer film is preferably 10nm, more preferably 30 nm, and still more preferably 50 nm. The upperlimit of the average thickness is preferably 1,000 nm, more preferably500 nm, and still more preferably 200 nm.

As the SOG composition, a conventionally well-known SOG composition orthe like may be used, and for example, a composition containing anorganic polysiloxane, and the like may be exemplified.

The forming procedure of the SOG film is not particularly limited, andexamples thereof include a process in which after applying an SOGcomposition onto one face of the substrate or the face of the underlayerfilm not facing the substrate 1 by a well-known procedure such asspin-coating, followed by PB, and the resultant coating film is hardenedby carrying out irradiation with a radioactive ray and/or heating.Examples of the radioactive ray for use in irradiation include:electromagnetic waves such as a visible light ray, an ultraviolet ray, afar ultraviolet ray, an X-ray and a γ-ray; particle rays such as anelectron beam, a molecular beam and an ion beam; and the like. The lowerlimit of the temperature of the heating is preferably 100° C., morepreferably 150° C., and still more preferably 180° C. The upper limit ofthe temperature of the heating is preferably 450° C. more preferably400° C., and still more preferably 350° C. The lower limit of theheating time period is preferably 5 sec, more preferably 10 sec, andstill more preferably 20 sec. The upper limit of the heating time periodis preferably 1,200 sec, more preferably 600 sec, and still morepreferably 300 sec. The lower limit of the Average thickness of the SOGfilm is preferably 10 nm, more preferably 15 nm, and still morepreferably 20 nm. The upper limit of the average thickness is preferably1,000 nm, more preferably 500 nm, and still more preferably 100 nm.

As the resist composition, a conventional resist composition such as,for example, a composition containing a polymer having an acid-labilegroup, a radiation-sensitive acid generator and a solvent, or the likemay be used.

In the procedure of resist film pattern formation, the resistcomposition is applied onto: one face of the substrate 1; a face of theunderlayer film not facing the substrate 1; or a face of the SOG filmnot facing the substrate 1, and thereafter PB is carried out, whereby aresist film is formed. Next, an exposure is carried out through a maskpattern for forming the base pattern 2 having a desired shape. Examplesof the radioactive ray which may be used for the exposure includeelectromagnetic waves such as an ultraviolet ray, a far ultraviolet ray,an extreme ultraviolet ray (EUV), and an X-ray; charged particle rayssuch as an electron beam and a α-ray, and the like. Of these, the farultraviolet ray is preferred, an ArF excimer laser beam and a KrFexcimer laser beam are more preferred, and an ArF excimer laser beam isstill more preferred. For the exposure, liquid immersion lithography maybe employed. After the exposure, it is preferred that post exposurebaking (PEB) is carried out. Then, a development is carried out by usinga developer solution, e.g., an alkaline developer solution such as a2.38% by mass aqueous tetramethylammonium hydroxide solution or anaqueous tetrabutylammonium hydroxide solution, an organic solvent suchas butyl acetate or anisole.

The lower limit of the average thickness of the resist film ispreferably 10 nm, more preferably 30 nm, and still more preferably 50nm. The upper limit of the average thickness is preferably 1,000 nm,more preferably 500 nm, and still more preferably 200 nm.

The shape of the base pattern 2 may be appropriately selected dependingon the shape of the formed pattern that the substrate will finally have,and is exemplified by, in a planar view: circular (true circular);elliptic (oval); regular tetragonal; rectangular; hook-shaped;trapezoidal; triangular; and the like.

In the case of the base pattern 2 to be formed being circular, the lowerlimit of the average diameter thereof is preferably 10 nm, morepreferably 20 nm, still more preferably 30 nm, and particularlypreferably 40 nm. The upper limit of the average diameter is preferably200 nm, more preferably 100 nm, still more preferably 90 nm, andparticularly preferably 80 nm.

The lower limit of the pitch of the base pattern 2 formed is preferably30 nm, more preferably 50 nm, even more preferably 70 nm, andparticularly preferably 90 nm. The upper limit of the pitch ispreferably 1,000 nm, more preferably 500 nm, even more preferably 200nm, and particularly preferably 150 nm.

The lower limit of the ratio of the pitch to the average diameter of thebase pattern 2 is preferably 0.5, more preferably 1, even morepreferably 1.5, and particularly preferably 1.8. The upper limit of theratio is preferably 10, more preferably 7, even more preferably 4, andparticularly preferably 3.

Thus obtained base pattern 2 can be subjected to a treatment of, forexample, irradiating with an ultraviolet ray of 254 nm, etc., followedby heating at 100° C. or higher and 200° C. or lower for a time periodof no less than 1 min and no greater than 30 min so as to promotehardening.

In addition, the face of the base pattern 2 may be subjected to ahydrophobilization treatment or a hydrophilization treatment. A specifictreatment procedure may be exemplified by e.g., a hydrogenationtreatment including an exposure to hydrogen plasma for a certain periodof time. By increasing the hydrophobicity or hydrophilicity of the faceof the base pattern 2, coating properties of the composition (I) in theapplying step can be further improved.

In the pattern-forming method (I), the base pattern 2 in a planar viewhas a shape with a long axis and a short axis, with the long axis/shortaxis ratio being no less than 1.5 and no greater than 10. “In a planarview” as referred to means a view from a vertical direction with respectto the substrate 1.

As the shape with a long axis and a short axis in the base pattern 2, ananisotropic shape such as an elliptic shape and a rectangular shape maybe exemplified. Of these, in light of possibility of a furtherimprovement of the directional uniformity of a dimension reductionamount in the pattern formation, the elliptic shape is preferred.

The lower limit of the long axis/short axis ratio is preferably 2, morepreferably 2.5, still more preferably 3, and particularly preferably3.5. The upper limit of the long axis/short axis ratio is preferably9.5, more preferably 9, still more preferably 8.5, and particularlypreferably 8.

It is particularly preferable to employ the pattern-forming method (II),since even in the case of the base pattern 2 having a shape, in a planarview, with a long axis and a short axis, a sufficient dimensionreduction amount can be obtained and the directional uniformity of thedimension reduction amount is superior.

Application Step

In this step, the composition (I) is applied on at least the lateralface of the base pattern 2 as illustrated in FIG. 2.

The applying procedure of the composition (I) is exemplified byspin-coating and the like.

Composition (I)

The composition (I) contains the polymer (A) that is capable ofinteracting with the polymer (P) constituting the base pattern 2. Thecomposition (I) generally contains, in addition to the polymer (A), asolvent (B). The composition (I) may contain other component in additionto the polymer (A) and the solvent (B).

(A) Polymer

The polymer (A) is one or a plurality of polymers that is/are capable ofinteracting with the polymer (P) constituting the base pattern 2. Thepolymer (A) generally has a group that can interact with the polymer (P)(hereinafter, may be also referred to as “group (I)”). The interactionbetween the polymer (A) and the polymer (P) is, in light of furtherfacilitation of overlaying of the polymer (A) onto a lateral face of thebase pattern 2: preferably formation of a chemical bond; more preferablyformation of a covalent bond, formation of an ionic bond, anelectrostatic attractive force between molecules, or formation of ahydrogen bond; still more preferably formation of a covalent bond, orformation of a hydrogen bond; and particularly preferably formation of acovalent bond.

In the case of the polymer (P) having a hydroxy group and/or a carboxygroup, the group (I) that is capable of forming a chemical bond with thepolymer (P) is exemplified by a group that includes a hydroxy group, acarboxy group, a sulfanyl group, an epoxy group, a cyano group, a vinylgroup and/or a carbonyl group, and the like. Of these, since it isconsidered to form a covalent bond with a hydroxy group and/or a carboxygroup in the polymer (P) under heat, and in light of possibility of astrong interaction, the group (I) is preferably a group that includes ahydroxy group, or a group that includes a carbonyl group, and morepreferably a group that includes a hydroxy group.

In the polymer (A), the group (I) may bond to an end of either the mainchain, or ends of both the side chain and the main chain. The “mainchain” as referred to means the longest one of the atom chains of apolymer. The “side chain” as referred to means an atom chain of apolymer other than the main chain. Of these, in light of enhancing theinteraction with the polymer (P), the group (I) preferably bonds to anend of the main chain.

Examples of the group (I) that bonds to an end of the main chain of thepolymer (A) include groups represented by the following formulae.

Of these, a group having a hydroxy group is preferred, and ahydroxyethyl group and a hydroxypropyl group are more preferred.

Examples of the polymer (A) include a styrene polymer, a (meth)acrylicpolymer, an ethylene polymer, a copolymer composed of a combinationthereof, and the like.

The styrene polymer includes a structural unit derived from substitutedor unsubstituted styrene.

Examples of the substituted styrene include α-methylstyrene, o-, m-,p-methyl styrene, p-t-butylstyrene, 2,4,6-trimethyl styrene,p-methoxystyrene, p-t-butoxystyrene, o-, m-, p-vinylstyrene, o-, m-,p-hydroxystyrene, m-, p-chloromethylstyrene, p-chlorostyrene,p-bromostyrene, p-iodostyrene, p-nitrostyrene, p-cyano styrene, and thelike.

The (meth)acrylic polymer includes a structural unit derived from(meth)acrylic acid or a (meth)acrylic acid ester.

Examples of the (meth)acrylic acid ester include:

(meth)acrylic acid alkyl esters such as methyl (meth)acrylate, ethyl(meth)acrylate, t-butyl (meth)acrylate and 2-ethylhexyl (meth)acrylate;

(meth)acrylic acid cycloalkyl esters such as cyclopentyl (meth)acrylate,cyclohexyl (meth)acrylate, 1-methylcyclopentyl (meth)acrylate,2-ethyladamantyl (meth)acrylate and 2-(adamantan-1-yl)propyl(meth)acrylate;

(meth)acrylic acid aryl esters such as phenyl (meth)acrylate andnaphthyl (meth)acrylate;

(meth)acrylic acid-substituted alkyl esters such as 2-hydroxyethyl(meth)acrylate, 3-hydroxyadamantyl (meth)acrylate, 3-glycidylpropyl(meth)acrylate and 3-trimethylsilylpropyl (meth)acrylate; and the like.

The ethylene polymer includes a structural unit derived from substitutedor unsubstituted ethylene.

Examples of the substituted ethylene include:

alkenes such as propene, butene and pentene;

vinylcycloalkanes such as vinylcyclopentane and vinylcyclohexane;

cycloalkenes such as cyclopentene and cyclohexene;

4-hydroxy-1-butene; vinylglycidyl ether; vinyltrimethylsilyl ether; andthe like.

In a case where the polymer (P) constituting the base pattern 2 containsan aromatic ring, in light of increasing an interaction between thepolymer (P) and the polymer (A), the polymer (A) is preferably a styrenepolymer, more preferably a styrene polymer having the group (I) thatbonds to at least one end of the main chain, still more preferably astyrene polymer having a group that bonds to at least one end of themain chain and includes at least one of: a hydroxy group; a carboxygroup; a sulfanyl group; an epoxy group; a cyano group; a vinyl group;and a carbonyl group, and particularly preferably a polymer ofunsubstituted styrene having a group that bonds to at least one end ofthe main chain and includes at least one of: a hydroxy group; a carboxygroup; a sulfanyl group; an epoxy group; a cyano group; a vinyl group;and a carbonyl group.

The lower limit of the weight average molecular weight (Mw) of thepolymer (A) is preferably 1,000, more preferably 3,000, even morepreferably 5,000, and particularly preferably 7,000. The upper limit ofthe Mw is preferably 100,000, more preferably 70,000, even morepreferably 50,000, and particularly preferably 40,000.

The upper limit of the ratio (dispersity index) of the Mw to the numberaverage molecular weight (Mn) of the polymer (A) is preferably 5, morepreferably 3, even more preferably 2, and particularly preferably 1.3.The lower limit of the ratio is preferably 1, and more preferably 1.05.

The lower limit of the content of the polymer (A) in the composition (I)with respect to the total solid content is preferably 80% by mass, morepreferably 90% by mass, and still more preferably 95% by mass. The upperlimit of the content is, for example, 100% by mass. The “total solidcontent” as referred to means the sum of the components other than thesolvent (B).

(B) Solvent

The solvent (B) is not particularly limited as long as it is a solventcapable of dissolving or dispersing at least the polymer (A) and othercomponent(s).

Examples of the solvent (B) include an alcohol solvent, an ethersolvent, a ketone solvent, an amide solvent, an ester solvent, and ahydrocarbon solvent.

Examples of the alcohol solvent include:

monohydric alcohol solvents such as methanol, ethanol, n-propanol,iso-propanol, n-butanol, iso-butanol, sec-butanol, tert-butanol,n-pentanol, iso-pentanol, 2-methylbutanol, sec-pentanol, tert-pentanol,3-methoxybutanol, n-hexanol, 2-methylpentanol, sec-hexanol,2-ethylbutanol, sec-heptanol, 3-heptanol, n-octanol, 2-ethylhexanol,sec-octanol, n-nonyl alcohol, 2,6-dimethyl-4-heptanol, n-decanol,sec-undecyl alcohol, trimethylnonyl alcohol, sec-tetradecyl alcohol,sec-heptadecyl alcohol, furfuryl alcohol, phenol, cyclohexanol,methylcyclohexanol, 3,3,5-trimethylcyclohexanol, benzyl alcohol anddiacetone alcohol;

polyhydric alcohol solvents such as ethylene glycol, 1,2-propyleneglycol, 1,3-butylene glycol, 2,4-pentanediol, 2-methyl-2,4-pentanediol,2,5-hexanediol, 2,4-heptanediol, 2-ethyl-1,3-hexanediol, diethyleneglycol, dipropylene glycol, triethylene glycol and tripropylene glycol;

polyhydric alcohol partially etherified solvents such as ethylene glycolmonomethyl ether, ethylene glycol monoethyl ether, ethylene glycolmonopropyl ether, ethylene glycol monobutyl ether, ethylene glycolmonohexyl ether, ethylene glycol monophenyl ether, ethylene glycolmono-2-ethylbutyl ether, diethylene glycol monomethyl ether, diethyleneglycol monoethyl ether, diethylene glycol monopropyl ether, diethyleneglycol monobutyl ether, diethylene glycol monohexyl ether, propyleneglycol monomethyl ether, propylene glycol monoethyl ether, propyleneglycol monopropyl ether, propylene glycol monobutyl ether, dipropyleneglycol monomethyl ether, dipropylene glycol monoethyl ether anddipropylene glycol monopropyl ether; and the like.

Examples of the ether solvent include:

dialkyl ether solvents such as diethyl ether, dipropyl ether and dibutylether;

cyclic ether solvents such as tetrahydrofuran and tetrahydropyran;

aromatic ring-containing ether solvents such as diphenyl ether andanisole; and the like.

Examples of the ketone solvent include:

chain ketone solvents such as acetone, methyl ethyl ketone, methyln-propyl ketone, methyl n-butyl ketone, diethyl ketone, methyl iso-butylketone, 2-heptanone, ethyl n-butyl ketone, methyl n-hexyl ketone,di-iso-butyl ketone and trimethylnonanone;

cyclic ketone solvents such as cyclopentanone, cyclohexanone,cycloheptanone, cyclooctanone and methylcyclohexanone;

2,4-pentanedione, acetonylacetone, and acetophenone; and the like.

Examples of the amide solvent include:

cyclic amide solvents such as N,N′-dimethylimidazolidinone andN-methylpyrrolidone;

chain amide solvents such as N-methylformamide, N,N-dimethylformamide,N,N-diethylformamide, acetamide, N-methylacetamide,N,N-dimethylacetamide and N-methylpropionamide; and the like.

Examples of the ester solvent include:

acetic acid ester solvents such as methyl acetate, ethyl acetate,n-propyl acetate, iso-propyl acetate, n-butyl acetate, iso-butylacetate, sec-butyl acetate, n-pentyl acetate, i-pentyl acetate,sec-pentyl acetate, 3-methoxybutyl acetate, methylpentyl acetate,2-ethylbutyl acetate, 2-ethylhexyl acetate, benzyl acetate, cyclohexylacetate, methylcyclohexyl acetate and n-nonyl acetate;

polyhydric alcohol partially etherified carboxylate solvents such asethylene glycol monomethyl ether acetate, ethylene glycol monoethylether acetate, diethylene glycol monomethyl ether acetate, diethyleneglycol monoethyl ether acetate, diethylene glycol mono-n-butyl etheracetate, propylene glycol monomethyl ether acetate, propylene glycolmonomethyl ether propionate, propylene glycol monoethyl ether acetate,propylene glycol monopropyl ether acetate, propylene glycol monobutylether acetate, dipropylene glycol monomethyl ether acetate anddipropylene glycol monoethyl ether acetate;

lactone solvents such as γ-butyrolactone and valerolactone;

carbonate solvents such as dimethyl carbonate, diethyl carbonate,ethylene carbonate and propylene carbonate;

glycol diacetate, methoxytriglycol acetate, ethyl propionate, n-butylpropionate, iso-amyl propionate, diethyl oxalate, di-n-butyl oxalate,methyl acetoacetate, ethyl acetoacetate, methyl lactate, ethyl lactate,n-butyl lactate, n-amyl lactate, diethyl malonate, dimethyl phthalate,and diethyl phthalate; and the like.

Examples of the hydrocarbon solvent include:

aliphatic hydrocarbon solvents such as n-pentane, iso-pentane, n-hexane,iso-hexane, n-heptane, iso-heptane, 2,2,4-trimethylpentane, n-octane,iso-octane, cyclohexane and methylcyclohexane; and

aromatic hydrocarbon solvents such as benzene, toluene, xylene,mesitylene, ethylbenzene, trimethylbenzene, methylethylbenzene,n-propylbenzene, iso-propylbenzene, diethylbenzene, iso-butylbenzene,triethylbenzene, di-iso-propylbenzene and n-amylnaphthalene; and thelike.

Of these, the ester solvent is preferred, the polyhydric alcoholpartially etherified carboxylate solvent is more preferred, andpropylene glycol monomethyl ether acetate is still more preferred. Thecomposition (I) may contain one type of the solvent (B), or two or moretypes thereof.

Other Component

The composition (I) may also contain other component(s) in addition tothe polymer (A) and the solvent (B). The other component(s) is/areexemplified by a surfactant and the like. When the composition (I)contains the surfactant, the application property onto the base pattern2 may be improved.

Preparation Method of Composition (I)

The composition (I) may be prepared by, for example, mixing the polymer(A), the solvent (B), and as needed the other component(s) at apredetermined ratio, and preferably filtering the resulting mixturethrough a membrane filter having a polar size of about 200 nm, etc. Thelower limit of the solid content concentration of the composition (I) ispreferably 0.1% by mass, more preferably 0.5% by mass, and still morepreferably 0.7% by mass. The upper limit of the solid contentconcentration is preferably 30% by mass, more preferably 10% by mass,and still more preferably 3% by mass.

Composition (I′)

In the pattern-forming method (II), the composition (I′) is applied asthe composition (I) in the application step. The composition (I′)contains a plurality of polymers (polymer (A′)) as the polymer (A), theplurality of polymers each having different weight average molecularweight (Mw).

The polymer (A′) in the composition (I′) is preferably two types ofpolymers having different Mw. Hereinafter, the two types of polymers arereferred to as a third polymer (hereinafter, may be also referred to as“polymer (A1)”) and a fourth polymer (hereinafter, may be also referredto as “polymer (A2)”). It is to be noted that Mw of the polymer (A2) isgreater than Mw of the polymer (A1).

The Mw of the polymer (A1) is preferably no less than 5,000, morepreferably no less than 8,000, and still more preferably no less than10,000. The Mw is preferably no greater than 25,000, more preferably nogreater than 23,000, and still more preferably no greater than 22,000.

The Mw of the polymer (A2) is preferably greater than 25,000, morepreferably greater than 27,000, and still more preferably greater than30,000. The Mw is preferably no greater than 50,000, more preferably nogreater than 40,000, and still more preferably no greater than 37,000.

The lower limit of the difference between the Mw of the polymer (A2) andthe Mw of the polymer (A1), that is the lower limit of a value obtainedby subtracting the Mw of the polymer (A1) from the Mw of the polymer(A2), is preferably 2,000, more preferably 5,000, still more preferably8,000, and particularly preferably 15,000. The upper limit of theabovementioned value is preferably 30,000, more preferably 25,000, andstill more preferably 22,000.

The lower limit of a ratio of the Mw of the polymer (A2) to the Mw ofthe polymer (A1), that is the lower limit of a value obtained bydividing the Mw of the polymer (A2) by the Mw of the polymer (A1), ispreferably 1.1, more preferably 1.4, still more preferably 1.8, andparticularly preferably 2.5. The upper limit of the abovementioned valueis preferably 5, more preferably 4, and still more preferably 3.5.

In the pattern-forming method (I), the composition (I′) is preferred asthe composition (I) to be applied in the application step.

Heating Step

In this step, the composition (I) obtained after the application step isheated. This accelerates the interaction between the polymer (P) in thebase pattern 2 and the polymer (A) in the composition (I) as illustratedin FIG. 3, thus overlaying, on a lateral face of the base pattern 2, acoating film (I) 4 containing the polymer (A) in a portion interactedwith the polymer (P) is facilitated.

Examples of a heating means include an oven and a hot plate. The lowerlimit of the heating temperature is preferably 80° C., more preferably100° C., and still more preferably 150° C. The upper limit of theheating temperature is preferably 400° C., more preferably 350° C., andstill more preferably 300° C. The lower limit of the heating time ispreferably 10 sec, more preferably 1 min, and still more preferably 10min. The upper limit of the heating time is preferably 120 min, morepreferably 60 min, and still more preferably 30 min.

Removing Step

In this step, a portion of the polymer (A) not having interacted withthe polymer (P) is removed. This removes the portion in the composition(I) 3 containing the polymer (A) not having interacted with the polymer(P) after the heating step, and forms a resist pattern composed of thebase pattern 2 and the coating film (I) 4 as illustrated in FIG. 4.

Removal in the removing step is generally rinsing of the substrate 1, onwhich the coating film (I) 4 is formed, with a rinse agent. An organicsolvent is generally used as the rinse agent, and for example, apolyhydric alcohol partially etherified carboxylate solvent such aspropylene glycol monomethyl ether acetate is used.

An average thickness of the coating film (I) 4 being formed can beadjusted to a desired value by appropriately selecting conditions suchas: a type and concentration of the polymer (A) in the composition (I);and the heating temperature and the heating time in the heating stepaccording to a desired dimension reduction amount. The resistpattern-forming method can make the directional uniformity of thedimension reduction amount superior in the case of the base pattern 2having an anisotropic shape. The lower limit of the average thickness ofthe coating film (I) 4 is preferably 1 nm, more preferably 3 nm, andstill more preferably 5 nm. The upper limit of the average thickness is,for example, 20 nm.

Etching Step

In this step, the substrate is etched by directly or indirectly usingthe resist pattern composed of the base pattern 2 and the coating film(I) 4 obtained after the removing step overlaid on the lateral facethereof. This step forms a substrate pattern. The resist pattern-formingmethod, which uses the resist pattern obtained by shrinking superior indirectional uniformity of a dimension reduction amount, can provide asubstrate pattern having a desired shape.

In a case where the base pattern 2 is directly formed on a front faceside of the substrate 1 in the base pattern-forming step, this etchinggenerally uses the resist pattern directly, in other words, the etchingis performed once to obtain the substrate pattern. In a case where thebase pattern is formed on the front face side of the substrate 1 viaanother layer, this etching generally uses the resist patternindirectly, i.e., the another layer is etched by using the resistpattern and then etching is successively performed by using the anotherlayer thus etched as a mask, in other words, the etching is performed aplurality of times to obtain the substrate pattern.

Examples of the substrate pattern include a contact hole pattern.

The etching procedure is exemplified by well-known techniques including:reactive ion etching (RIE) such as chemical dry etching carried outusing CF₄, an O₂ gas or the like by utilizing the difference in etchingrate of each layer, etc., as well as chemical wet etching (wetdevelopment) carried out by using an etching liquid such as an organicsolvent or hydrofluoric acid; physical etching such as sputteringetching and ion beam etching. Of these, the reactive ion etching ispreferred, and the chemical dry etching and the chemical wet etching aremore preferred.

Prior to the chemical dry etching, an irradiation with a radioactive raymay be also carried out as needed. As the radioactive ray, when theportion to be removed by etching is a polymer containing a methylpolymethacrylate block, a radioactive ray of 172 nm or the like may beused. The irradiation with such a radioactive ray results in degradationof the methyl polymethacrylate block, whereby the etching isfacilitated.

Examples of the organic solvent for use in the chemical wet etchinginclude:

alkanes such as n-pentane, n-hexane and n-heptane;

cycloalkanes such as cyclohexane, cycloheptane and cyclooctane;

saturated carboxylic acid esters such as ethyl acetate, n-butyl acetate,i-butyl acetate and methyl propionate;

ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone andmethyl n-pentyl ketone;

alcohols such as methanol, ethanol, 1-propanol, 2-propanol and4-methyl-2-pentanol; and the like. These solvents may be used eitheralone, or two or more types thereof may be used in combination.

After completion of the patterning onto the substrate, the parts used asa mask are removed from the front face side of the substrate by adissolving treatment or the like, whereby a substrate having the formedpattern can be finally obtained. The substrate obtained according to thepattern-forming method is suitably used for semiconductor elements andthe like, and the semiconductor elements are widely used for LED, solarcells, and the like.

Composition

The composition contains two types of polymers having different weightaverage molecular weights, wherein:

the two types of polymers are each a styrene polymer having a group thatbonds to at least one end of a main chain, the group having at least oneof a hydroxy group, a carboxy group, a sulfanil group, an epoxy group, acyano group, a vinyl group, and a carbonyl group;

a difference in weight average molecular weight between the two types ofpolymers is no less than 2,000 and no greater than 30,000; and

the weight average molecular weight of one polymer among the two typesof polymers is no less than 5,000 and no greater than 25,000, and theweight average molecular weight of another polymer is greater than25,000 and no greater than 50,000.

The composition is described supposing a case where: the composition(I′) used in the pattern-forming method (II) contains two types ofpolymers (the polymer (A1) and the polymer (A2)) each having differentMw as the polymer (A′); both of the polymer (A1) and the polymer (A2)are the styrene polymer having the abovementioned group that bonds to atleast one end of a main chain; and the difference in Mw between thepolymer (A1) and the polymer (A2), the Mw of the polymer (A1), and theMw of the polymer (A2) fall within the above ranges.

EXAMPLES

Hereinafter, the present invention is explained in detail by way ofExamples, but the present invention is not in any way limited to theseExamples. Measuring methods for various types of physical properties areshown below.

Mw and Mn

The Mw and the Mn of the polymer were determined by gel permeationchromatography (GPC) using GPC columns (Tosoh Corporation; “G2000HXL”×2, “G3000 HXL”×1 and “G4000 HXL”×1) under the following conditions:

eluent: tetrahydrofuran (Wako Pure Chemical Industries, Ltd.);

flow rate: 1.0 mL/min;

sample concentration: 1.0% by mass;

amount of sample injected: 100 μL;

column temperature: 40° C.;

detector: differential refractometer; and

standard substance: mono-dispersed polystyrene.

¹³C-NMR Analysis

¹³C-NMR analysis was carried out using a nuclear magnetic resonanceapparatus (“JNM-EX400” available from JEOL, Ltd.), with DMSO-d₆ for useas a solvent for measurement. The proportion of each structural unit inthe polymer was calculated from an area ratio of a peak corresponding toeach structural unit on the spectrum obtained by the ¹³C-NMR.

Synthesis of Polymer

Monomer compounds and a polymerization initiator used for synthesis of apolymer (a-1) in a composition used in Comparative Examples are shownbelow.

Synthesis Example 1 (Synthesis of Polymer (a-1))

A monomer solution was prepared by dissolving 65 mol % of the compound(M-1), 35 mol % of the compound (M-2), and 2 mol % of the compound (Z-1)as a polymerization initiator in 60 g of methyl ethyl ketone. It is tobe noted that mol % of each compound is a proportion with respect to atotal molar number of all compounds, and mol % of the polymerizationinitiator is a proportion with respect to a total molar number of allcompounds and the polymerization initiator. The total mass of thecompound was adjusted to 30 g. Then, a 500 mL three-neck flask equippedwith a thermometer and a dropping funnel was charged with 30 g of methylethyl ketone, followed by nitrogen purge for 30 min and then heating to80° C. while stirring inside the flask with a magnetic stirrer.Thereafter, the monomer solution thus prepared was added dropwise intothe three-neck flask over 3 hrs by using the dropping funnel. Apolymerization reaction was conducted for 6 hrs from the start of thedropwise addition that is considered as the start of the polymerizationreaction. Following cooling of the polymerization reaction liquid to 30°C. or lower, the polymerization reaction liquid was added to 600 g ofmethanol and deposited white powder was filtered out. The white powderthus filtered out was washed twice each with 120 g of methanol by makingit into a slurry, followed by filtering out and drying at 50° C. for 17hrs to obtain white powder of the polymer (a-1) (yield: 82.3%). Mw ofthe polymer (a-1) was 14,000 and Mw/Mn was 2.33. In addition, the¹³C-NMR analysis revealed that proportions of a structural unit derivedfrom (M-1) and a structural unit derived from (M-2) in the polymer (a-1)were 63.9 mol % and 36.1 mol %, respectively.

Preparation of Composition (I)

The polymer (A), the solvent (B) and a basic compound that were used forpreparation of the composition (I) are shown below.

Polymer (A)

A-1: ω-hydroxy terminated polystyrene (Mw=10,900, Mw/Mn=1.09,CAS#9003-53-6, available from Polymer Source, a polymer represented bythe following formula (A-1))

A-2: ω-hydroxy terminated polystyrene (Mw=21,300, Mw/Mn=1.09,CAS#9003-53-6, available from Polymer Source, a polymer represented bythe following formula (A-2))

A-3: ω-hydroxy terminated polystyrene (Mw=35,200, Mw/Mn=1.10,CAS#9003-53-6, available from Polymer Source, a polymer represented bythe following formula (A-3))

a-1: the polymer (a-1) synthesized in Synthesis Example 1

Solvent (B)

B-1: propylene glycol monomethyl ether acetate

B-2: cyclohexanone

Basic Compound

Q-1: triphenyl sulfonium n-butyltrifluoromethylsulfonamide (a compoundrepresented by the following formula (Q-1))

Preparation Example 1 (Preparation of Composition (S-1))

A composition (S-1) was prepared by mixing 100 parts by mass of the(A-1) as the polymer (A) and 9,900 parts by mass of (B-1) as the solvent(B).

Preparation Examples 2 to 8 (Preparation of Compositions (S-2) to (S-8))

Compositions (S-2) to (S-8) were prepared in similar manners toPreparation Example 1, except for using components of type and contentspecified in Table 1 below.

TABLE 1 Preparation Preparation Preparation Preparation PreparationPreparation Preparation Preparation (parts by mass) Example 1 Example 2Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Composition(I) S-1 S-2 S-3 S-4 S-5 S-6 S-7 S-8 Polymer (A) A-1 100 50 50 30 70 A-2100 50 50 A-3 100 50 50 70 30 Solvent (B) B-1 9,900 9,900 9,900 9,9009,900 9,900 9,900 9,900 Solid content 1 1 1 1 1 1 1 1 concentration (%by mass)

Preparation Example 9 (Preparation of Composition (CS-1))

A composition (CS-1) was prepared by mixing 100 parts by mass of thepolymer (a-1), 8 parts by mass of (Q-1) as the basic compound, as wellas 2,084 parts by mass of (B-1) and 894 parts by mass of (B-2) as thesolvent (B).

Resist Pattern Formation Examples 1 to 12 Base Pattern (Guide HolePattern) Formation

An underlayer film having an average thickness of 100 nm was formed on abare-Si substrate by using a composition for underlayer film formation(“HM710” available from JSR Corporation). On this underlayer film, anSOG film having an average thickness of 30 nm was formed by using an SOGcomposition (“ISX302” available from JSR Corporation). On the SOG film,a resist composition (“AIM5484JN” available from JSR Corporation) wasapplied to form a resist film having an average thickness of 85 nm,which was then subjected to ArF liquid immersion lithography. The resistfilm was developed using a 2.38% by mass aqueous tetrabuthylammoniumhydroxide solution to form a resist pattern. Next, by using this resistfilm pattern as a mask, etching of the SOG film was carried out with agas mixture of CF₄/O₂/Air. Then, the underlayer film was etched by usingthus obtained SOG film pattern as a mask with an N₂/O₂ gas mixture toform a circular hole pattern (hole diameter: 50 nm/pitch: 10 nm)(Examples 1 to 8) and an elliptic hole pattern (short axis length: 54nm/short axis direction pitch: 176 nm; long axis length: 284 nm/longaxis direction pitch: 350 nm) (Examples 9 to 12).

Resist Pattern Formation

The composition (I) shown in Table 2 or Table 3 below was spin-coated onthe guide hole pattern thus formed, followed by baking at 200° C. for 20min. The substrate obtained after the baking was rinsed by usingpropylene glycol monomethyl ether acetate (PGMEA) to obtain a resistpattern, which was a shrunk hole pattern.

Comparative Examples 1 and 2 Base Pattern (Guide Hole Pattern) Formation

An underlayer antireflective film having an average film thickness of105 nm was formed on a Bare-Si substrate by using an antireflective filmforming agent (“ARC66” available from Nissan Chemical Industries, Ltd.).A resist composition (“AIM5484JN” available from JSR) was applied ontothe underlayer antireflective film to form a resist film having anaverage thickness of 70 nm, followed by ArF liquid immersionlithography, development with n-butyl acetate, and rinse with4-methyl-2-pentanol, to form a circular hole pattern (hole diameter: 50nm/pitch: 125 nm) (Comparative Example 1) and an elliptic hole pattern(short axis length: 55 nm/short axis direction pitch: 120 nm; long axislength: 120 nm/long axis direction pitch: 200 nm) (Comparative Example2).

Resist Pattern Formation

The composition (CS-1) was spin-coated on the guide hole pattern thusformed, followed by baking at 120° C. for 60 sec. The substrate obtainedafter the baking was developed by using n-butyl acetate and then rinsedby using 4-methyl-2-pentanol to obtain a resist pattern, which was ashrunk hole pattern.

Evaluation Circular Pattern (Examples 1 to 8 and Comparative Example 1)

The resist pattern thus formed (shrunk circular hole pattern) wasevaluated for dimension reduction amount (unit: nm) and CDU (unit: nm)of the hole pattern, by using a scanning electron microscope. Results ofthe evaluation are shown in Table 2 below. CDU is defined by thestandard deviation (±3σ) of a dimension of the hole pattern, and asmaller value indicates smaller variance in the hole pattern size, whichis considered to be preferable.

TABLE 2 Dimension reduction Composition amount CDU (I) (nm) (nm) Example1 S-1 11 2.3 Example 2 S-2 16 2.2 Example 3 S-3 20 2.3 Example 4 S-4 132.3 Example 5 S-5 18 2.5 Example 6 S-6 15 2.3 Example 7 S-7 18 2.4Example 8 S-8 13 2.4 Comparative CS-1 18 3.5 Example 1

The results in Table 2 revealed that the pattern-forming methods ofExamples can provide, in the case of the circular base pattern, a resistpattern with a small CDU and a superior directional uniformity of adimension reduction amount in the shrinking.

Elliptic Pattern (Examples 9 to 12 and Comparative Example 2)

The resist pattern thus formed (shrunk elliptic hole pattern) wasevaluated for the dimension reduction amount of the hole pattern and thedimension reduction amount ratio, by using a scanning electronmicroscope. Results of the evaluation are shown in Table 3 below. Thedimension reduction amount is defined by an average value of a reductionamount in a short axis direction and a reduction amount in a long axisdirection. The dimension reduction amount ratio is defined by a valueobtained by dividing the reduction amount in the long axis directionwith the reduction amount in the short axis direction, and a valuecloser to 1 is considered to be more preferable.

TABLE 3 Dimension Dimension reduction reduction Composition amountamount ratio (I) (nm) (—) Example 9 S-1 10 1.00 Example 10 S-2 15 1.07Example 11 S-5 19 1.18 Example 12 S-7 20 1.05 Comparative CS-1 12 1.34Example 2

As can be seen from the results in Table 3, the pattern-forming methodsof Examples can make, in the case of the elliptic base pattern, thedimension reduction amount ratio a value close to 1, indicating superiordirectional uniformity of the dimension reduction amount in theshrinking.

EXPLANATION OF THE REFERENCE SYMBOLS

-   1 Substrate-   2 Base pattern-   3 Composition (I)-   4 Coating film (I)

1. A pattern-forming method comprising: forming a base patterncomprising a first polymer on a front face side of a substrate directlyor via other layer; applying a composition on at least a lateral face ofthe base pattern, the composition comprising at least one polymer thatis capable of interacting with the first polymer; heating thecomposition after the applying such that a portion of the at least onepolymer interacts with the first polymer and that a coating film whichcomprises the portion of the at least one polymer is formed on thelateral face of the base pattern; removing another portion of the atleast one polymer not having interacted with the first polymer to form aresist pattern comprising the base pattern and the coating film; andetching the substrate by using directly or indirectly the resist patternas a mask, wherein the at least one polymer comprises an unsubstitutedstyrene homopolymer, a (meth)acrylic acid ester homopolymer or acopolymer thereof, and the base pattern in a planar view has a shapewith a long axis and a short axis, and a ratio of lengths of the longaxis to the short axis is no less than 1.5 and no greater than
 10. 2.The pattern-forming method according to claim 1, wherein the at leastone polymer has a group that bonds to at least one end of a main chainand is capable of interacting with the first polymer.
 3. Thepattern-forming method according to claim 1, wherein the at least onepolymer comprises an unsubstituted styrene homopolymer.
 4. Thepattern-forming method according to claim 1, wherein the first polymercomprises as a principal component a polymer having a proportion of anaromatic ring of no less than 50% by mass.
 5. The pattern-forming methodaccording to claim 1, wherein in forming the base pattern, the basepattern is formed directly on the front face side of the substrate, andthe substrate is made of silicon.
 6. The pattern-forming methodaccording to claim 1, wherein the at least one polymer is a plurality ofpolymers each having a different weight average molecular weight.
 7. Thepattern-forming method according to claim 6, wherein the compositioncomprises, as the plurality of polymers, a third polymer and a fourthpolymer, and a difference in weight average molecular weight between thethird polymer and the fourth polymer is no less than 2,000 and nogreater than 30,000.
 8. The pattern-forming method according to claim 7,wherein a weight average molecular weight of the third polymer is noless than 5,000 and no greater than 25,000, and a weight averagemolecular weight of the fourth polymer is greater than 25,000 and nogreater than 50,000.
 9. A pattern-forming method comprising: forming abase pattern comprising a first polymer on a front face side of asubstrate directly or via other layer; applying a composition on atleast a lateral face of the base pattern to form a coating film, thecomposition comprising a plurality of polymers that are capable ofinteracting with the first polymer; heating the composition after theapplying such that a portion of the plurality of polymers interacts withthe first polymer and that a coating film which comprises the portion ofthe plurality of polymers is formed on the lateral face of the basepattern; removing another portion of the plurality of polymers nothaving interacted with the first polymer to form a resist patterncomprising the base pattern and the coating film; and etching thesubstrate by using directly or indirectly the resist pattern as a mask,wherein the plurality of polymers comprise an unsubstituted styrenehomopolymer, a (meth)acrylic acid ester homopolymer or a copolymerthereof, and the plurality of polymers each have a different weightaverage molecular weight.
 10. The pattern-forming method according toclaim 9, wherein the composition comprises, as the plurality ofpolymers, a third polymer and a fourth polymer, and a difference inweight average molecular weight between the third polymer and the fourthpolymer is no less than 2,000 and no greater than 30,000.
 11. Thepattern-forming method according to claim 10, wherein the weight averagemolecular weight of the third polymer is no less than 5,000 and nogreater than 25,000, and the weight average molecular weight of thefourth polymer is greater than 25,000 and no greater than 50,000. 12.The pattern-forming method according to claim 9, wherein the pluralityof polymers have a group that bonds to at least one end of a main chainand is capable of interacting with the first polymer.
 13. Thepattern-forming method according to claim 9, wherein the plurality ofpolymers comprise an unsubstituted styrene homopolymer.
 14. Thepattern-forming method according to claim 9, wherein the first polymercomprises as a principal component a polymer having a proportion of anaromatic ring of no less than 50% by mass.
 15. The pattern-formingmethod according to claim 9, wherein, in forming the base pattern, thebase pattern is formed directly on the front face side of the substrate,and the substrate is made of silicon. 16-17. (canceled)
 18. Thepattern-forming method according to claim 1, wherein the at least onepolymer that is capable of forming a covalent bond with the firstpolymer.
 19. The pattern-forming method according to claim 18, whereinthe first polymer comprises a hydroxy group, and the at least onepolymer is capable of forming a covalent bond with the hydroxy group ofthe first polymer.
 20. The pattern-forming method according to claim 1,wherein the at least one polymer comprises a group which is capable ofinteracting with the first polymer at an end of a main chain of the atleast one polymer.
 21. The pattern-forming method according to claim 9,wherein the plurality of polymers that are capable of forming a covalentbond with the first polymer.
 22. The pattern-forming method according toclaim 21, wherein the first polymer comprises a hydroxy group, and theplurality of polymers are capable of forming a covalent bond with thehydroxy group of the first polymer.